Enhancing the thermoelectric figure of merit in engineered graphene nanoribbons

• Hatef Sadeghi,
• Sara Sangtarash and
• Colin J. Lambert

Beilstein J. Nanotechnol. 2015, 6, 1176–1182, doi:10.3762/bjnano.6.119

• -space grid defined with a plane wave cut-off energy of 250 Ry and a maximum force tolerance of 40 meV/Å. From the converged DFT calculation, the underlying mean-field Hamiltonian was combined with the GOLLUM [12] implementation of the non-equilibrium Greens function (NEGF) method. This yields the

Numerical investigation of the effect of substrate surface roughness on the performance of zigzag graphene nanoribbon field effect transistors symmetrically doped with BN

• Majid Sanaeepur,
• Arash Yazdanpanah Goharrizi and
• Mohammad Javad Sharifi

Beilstein J. Nanotechnol. 2014, 5, 1569–1574, doi:10.3762/bjnano.5.168

• Green's function (NEGF) formalisms. The results show that with an appropriate selection of the substrate material, the proposed devices can meet the on/off-current ratio required for future digital electronics. Keywords: boron nitride; non-equilibrium Greens function (NEGF); on-/off-current ratio